Solid-state imaging device and imaging system using the same

摘要

In a solid-state imaging device, a plurality of vertical charge transfer paths is arranged at a horizontal pitch A within a photoelectric conversion region, and at a pitch B that is smaller than the pitch A in a portion where the signals are input into the horizontal charger transfer path. A horizontal charge transfer path for receiving signals from vertical charge transfer paths is provided for each photoelectric conversion block into which the photoelectric conversion region has been partitioned. Thus, a solid-state imaging device is achieved that is not so easily influenced by mask misalignments or skewed ion implantation angles, and in which signal read-out at high speeds is possible. <IMAGE>