发明名称 |
Reference cell for high speed sensing in non-volatile memories |
摘要 |
A reference cell for use in a high speed sensing circuit includes a first sub-circuit and a second sub-circuit. The first sub-circuit has a structure similar to memory cells within odd number rows of a main memory array. The second sub-circuit has a structure similar to memory cells within even numbered rows of the main memory array. If a target cell within the main memory array lies within an odd numbered row, then the first sub-circuit is selected, and if the target cell lies within an even numbered row, then second sub-circuit is selected. Both of the first and second sub-circuits include a reference transistors having its control gate broken into two parts. A first part is a poly 1 layer and is separated from the channel region by a tunneling oxide. A second part is a metal or poly 2 layer over the first part and separated from the first part by a gate oxide. A via is used to connect the first part to the second part. |
申请公布号 |
AU6184201(A) |
申请公布日期 |
2002.01.02 |
申请号 |
AU20010061842 |
申请日期 |
2001.05.14 |
申请人 |
ATMEL CORPORATION |
发明人 |
SAROJ PATHAK;JAMES E. PAYNE;JAGDISH PATHAK |
分类号 |
G11C16/06;G11C7/06;G11C7/14;G11C16/04;G11C16/28;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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