| 摘要 |
A semiconductor memory device is provided which is capable of suppressing an increase in leakage current of thin film capacitors formed by use of high dielectric constant film and controlling the threshold voltage of transistors at a desired value. The semiconductor memory device is formed by integrating transistors and thin film capacitors, a part or the whole of which are formed by high dielectric constant or ferroelectric films, on a semiconductor substrate. The semiconductor memory device is characterized in that it contains deuterium at a ratio higher than the natural abundance ratio of deuterium to hydrogen at an interface between the semiconductor substrate and a gate insulating film.
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