| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride semiconductor light-emitting element having an active layer of multi-quantum well structure, and by which an element of high luminous efficiency can be obtained. SOLUTION: This manufacturing method has features in the growth speed. That is, when a gallium nitride based semiconductor light-emitting element, having an active layer of multi quantum well structure expressed by the general formula InxGa1-xN (0<x<1)/InyGa1-yN (0<=y<x), is grown by an organic metal vapor growth method, the active layer is grown at a grown speed of 0.4-2.0 μm/h, preferably 0.6-1.5 μm/h, more preferably 0.8-1.2 μm/h. The thickness of an InxGa1-xN (0<x<1) well layer is 1.5-4.5 nm, and the thickness of a barrier layer is preferably 1.5-5.0 times the film thickness of the well layer. |
