| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a p-type II-VI compound semiconductor film and manufacture a light-emitting device, comprising the II-VI compound semiconductor by using the same. SOLUTION: A metal thin film 12 is formed on a c-face sapphire substrate 1, a p-type ZnO thin film 2 doped with As is formed thereon, and an n-type ZnO thin film 5 doped with Al is formed thereon. An upper electrode 13 is provided on the thin film 5, and a lower electrode 14 is provided on the thin film 12. |
