发明名称 STORAGE CAPACITOR STRUCTURE FOR LCD AND OELD AND FABRICATING METHOD THEREOF
摘要 PURPOSE: A storage capacitor structure for an LCD(liquid crystal display device) and an OELD(Organic Electro Luminescent Display) and a fabricating method thereof are provided to simultaneously form poly silicon thin film transistors together with storage capacitors in pixel regions of a TFT panel. CONSTITUTION: A storage capacitor structure for an LCD and an OELD includes a transparent substrate having a plurality of unit pixel regions, pixel transistors formed per the unit pixel and having a poly silicon active layer formed on the substrate and a dielectric layer and capacitor electrodes formed on the active layer in sequence, and storage capacitors formed per the unit pixel and having a poly silicon layer formed on the substrate and a dielectric layer and capacitor electrodes formed on the poly silicon layer in sequence. The poly silicon layers of the pixel transistors and the storage capacitors are crystallized by applying a metal(81) for inducing MILC(Metal Induced Lateral Crystallization) to at least a part of an amorphous silicon layer and carrying out heat treatment. The poly silicon layer of the storage capacitors includes parts extended outward beyond the boundary of the dielectric layer in at least two directions. The extended parts are applied with the metal for inducing the MILC.
申请公布号 KR20030037113(A) 申请公布日期 2003.05.12
申请号 KR20010068219 申请日期 2001.11.02
申请人 PT PLUS, LTD. 发明人 JU, SEUNG GI;LEE, SEOK UN
分类号 G02F1/136;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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