发明名称 PLATING METHOD OF CONDUCTIVE LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce a difference in level of a surface of a substrate after forming a conductive layer to evenly planarize the surface of the substrate by polishing. SOLUTION: On the substrate 1 having a first region 31 and a second region 33, a first conductive layer 11 whose surface is higher in the second region 33 than in the first region 31 is formed by electrolytic plating. In order to reduce a difference in level of the surface of the first conductive layer 11 between the first region 31 and the second region 33, a second conductive layer 21 which is thicker in the second region 33 than in the first region 31 is formed by electrolytic plating. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004363307(A) 申请公布日期 2004.12.24
申请号 JP20030159614 申请日期 2003.06.04
申请人 SONY CORP 发明人 SAKAIRI TAKU
分类号 C25D7/12;H01L21/306;H01L21/3065;H01L21/3205;(IPC1-7):H01L21/320 主分类号 C25D7/12
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