| 摘要 |
A method for manufacturing a semiconductor device is provided to remove copper residues by minimizing a stepped portion of an insulating layer using the same patterns formed within a pattern region and a non-pattern region. A substrate(110) having a plurality of pattern regions(110a) and a plurality of non-pattern regions(110b) is prepared. A plurality of patterns are formed within the pattern region. At this time, the same patterns as the patterns of the pattern region are formed within an arbitrary non-pattern region. A CMP process is performed on the resultant structure to planarize the substrate having patterns. The non-pattern region is located adjacent to the pattern region. A transistor is formed within each pattern region and each non-pattern region.
|
