发明名称 Non-volatile semiconductor memory device
摘要 A non-volatile semiconductor memory device includes a non-volatile memory element group having a first storage area which stores booting data and a second storage area to store storage addresses of the first storage area. The device further includes a detecting circuit which detects turn-ON of a power supply. The device further includes a register to which the storage address stored in the second storage area is read out and transferred from the non-volatile memory element group when the detecting circuit detects turn-ON of the power supply, and a control circuit which performs a control operation to output booting data stored in the first storage area and corresponding to the storage address transferred to the register after an initialization operation performed at the power supply turn-ON time is terminated.
申请公布号 US7307883(B2) 申请公布日期 2007.12.11
申请号 US20050133790 申请日期 2005.05.19
申请人 发明人
分类号 G06F12/16;G11C11/34;G06F9/00;G06F9/445;G11C16/02;G11C16/06;G11C16/20 主分类号 G06F12/16
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