| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element having a spacer formed by ONO (oxide film-nitride film-oxide film) for preventing punch-through phenomenon, and also to provide a method of manufacturing the same. SOLUTION: This method of manufacturing a semiconductor device comprises: a step of forming an element isolation film 150 in a semiconductor substrate 110; a step of forming a gate insulating film 210 and a gate electrode 250 on the semiconductor substrate 110; a step of depositing three layers of a lower oxide film 315-nitride film 325-upper oxide film 335 on all the surfaces of the semiconductor substrate 110, and also the gate electrode 250 and the gate insulating film 210; and a step of forming a spacer by etching the three layers of the lower oxide film 315-nitride film 325-upper oxide film 335. COPYRIGHT: (C)2008,JPO&INPIT
|
