| 摘要 |
PROBLEM TO BE SOLVED: To exclusively irradiate desired regions with a laser beam by suppressing position deviation between a stage and a substrate. SOLUTION: A semiconductor thin-film reforming apparatus includes a gastight vessel which can accommodate a substrate coated with a semiconductor material on a prescribed substrate setting section, a light source that radiates a light for irradiating the semiconductor material to heat the semiconductor material to a predetermined heat-treatment temperature, a light transmitting window provided on a wall of the gastight vessel for introducing the light from the light source into the gastight vessel by transmitting through the window, a holding means provided on the substrate setting section for fixing and holding the substrate on the substrate setting section, and a pressure controlling means for controlling the atmospheric pressure inside the gastight vessel during the light irradiation so as not to be lower than the vapor pressure of the semiconductor material melted by heating with the light irradiation, wherein the vapor pressure depends on the temperature of the melted semiconductor material. COPYRIGHT: (C)2008,JPO&INPIT
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