| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser element having a coplanar electrode structure with an improved high frequency characteristic. SOLUTION: The coplanar electrode structure of a VCSEL 10 includes a p-side contact electrode 26, and an n-side contact electrode 34 on the main surface of a substrate. A contact 40 where the n-side contact electrode 34 is electrically connected to an n-type semiconductor multilayer reflection films is formed in a region enclosed by the arches of a near-end radius r1 and a far-end radius r2 from the center of the opening part 28 of a post P, i.e., the center of light emission. An angle made by both the arches is set to be not less thanπ/2 radian and also smaller thanπradian. COPYRIGHT: (C)2008,JPO&INPIT
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