| 摘要 |
Some embodiments discussed relate to an apparatus for etching a semiconductor wafer and method for fabricating it, comprising a plurality of electrodes coupled to a power supply for generating a plasma stream and at least one electromagnetic radiation source and a wafer support to position a wafer for etching using the plasma stream and the wafer support having a plurality of apertures to allow passage of electromagnetic radiation from an electromagnetic radiation source through the wafer support to impinge on a surface of the wafer during etching.
|
