FLASH MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A flash memory device and a manufacturing method thereof are provided to improve compensate impurity diffusion without increasing an overall concentration of a channel impurity layer. When an isolation layer(72) is formed, a p-type impurity of a first channel impurity layer(56) is diffused, so that a concentration of the first channel impurity layer decreases. In particular, impurity concentration of the first channel impurity layer is lowered at a boundary between the isolation layer and an active region. To compensate for the decrease in impurity, a second channel impurity(74) is implanted into the first channel impurity layer to increase the concentration of the first channel impurity layer. In particular, the second channel impurity is additionally implanted into edges(52a) of the active region.