| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photovoltaic element which can move the electron and hole arising in semiconductor layers onto the electrode at the rear side with better efficiency. <P>SOLUTION: A photovoltaic element 1A has a semiconductor layer 2 attached between an optical receiving side 11 and a rear side 12 for generating electron depending on the incident light L. The semiconductor layer 2 has an n-type semiconductor region 21, a p-type semiconductor region 22, and an i-type semiconductor region 23. The i-type semiconductor region 23 is attached between the n-type semiconductor region 21 and the p-type semiconductor region 22, and a bandgap of the i-type semiconductor region 23 is smaller than that of each of the n-type semiconductor region 21 and the p-type semiconductor region 22. Further, each of the n-type semiconductor region 21 and the p-type semiconductor region 22 is jointed with the i-type semiconductor region 23, and the junction surface extends in the direction intersecting with the optical receiving side 11 and rear side 12. <P>COPYRIGHT: (C)2008,JPO&INPIT |
