发明名称 RESIST PATTERN PREDICTION SYSTEM, METHOD FOR PREDICTING RESIST PATTERN, AND METHOD FOR CORRECTING MASK PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist pattern prediction system capable of predicting a resist pattern at high accuracy. <P>SOLUTION: The resist pattern prediction system is provided with an optical simulator 307 for predicting the light intensity distribution of a projected image on a resist film of a mask pattern, a reaction simulator 309 for predicting a resist pattern formed on the resist film by photosensitive reaction by using the light intensity distribution, a modulation module 308 for generating a modulation pattern obtained by modulating a circuit pattern corresponding to the mask pattern, and a correction module 310 for correcting the predicted resist pattern by calculating a linear sum of the predicted resist pattern and the modulation pattern. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008091721(A) 申请公布日期 2008.04.17
申请号 JP20060272195 申请日期 2006.10.03
申请人 TOSHIBA CORP 发明人 SANHONGI SHOJI;TANAKA SATOSHI
分类号 H01L21/027;G03F1/36;G03F1/68 主分类号 H01L21/027
代理机构 代理人
主权项
地址