| 摘要 |
A method for forming a metal line of a semiconductor device is provided to increase step coverage for the post process of barrier metal deposition with reduced pattern defects, as the etching process is respectively controlled for each recipe to form a metal line, thereby increasing productivity and the reliability of the semiconductor device. A method for forming a metal line of a semiconductor device comprises the steps of: successively forming a first insulating layer(303), a contact hole, and a contact plug(307a) on a semiconductor substrate(301); successively forming a second insulating layer(309a), TEOS(Tetra Ethyl Ortho Silicate)(311a), and BARC(Bottom Anti-Reflective Coating)(313a) on the contact plug; forming a PR pattern for defining a metal line region on the BARC layer; etching the BARC using the PR pattern as a mask, to expose a part of the TEOS; etching the TEOS using the residual PR mask remaining after the BARC etching, to expose a part of the second insulating layer; etching the second insulating layer using the residual PR mask remaining after the TEOS etching as a mask, to expose a part of the first insulating layer and the contact plug; depositing a metal thin layer on the metal line region and the etched BARC, and planarizing the top surface to form a metal line(317a).
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