Doped silica glass crucible for making a silicon ingot

摘要

A crucible adapted for use in formation of a silicon crystal comprises a crucible wall including a bottom wall and a side wall. An inner layer is formed on an inner portion of the crucible wall and has distributed therein a crystallization agent containing an element selected from the group consisting of barium, aluminum, titanium and strontium. The crucible is made by forming a bulk grain layer on an interior surface of a rotating crucible mold, generating a high-temperature atmosphere in the crucible cavity, and introducing inner grain and crystallization agent into the high-temperature atmosphere, fusing the inner grain to form a doped inner layer. The inner layers of crucibles disclosed herein are adapted to, when heated, crystallize according to any of three operating modes that retain a smooth inner surface and reinforce the structural rigidity of the crucible walls.