| 摘要 |
A device isolation film of a semiconductor device and a method for manufacturing the same are provided to improve a gap fill characteristic and to prevent oxidation of an active region by using an SOD(Spin On Dielectric) layer of a laminated structure. A trench(125) for forming an STI(Shallow Trench Isolation) defines an active region(120). A first SOD(Spin On Dielectric) film(135) is reclaimed to the bottom of the trench. An insulating layer is formed in the top of the first SOD film and a side wall of the active region. The insulating layer protects the upper part of the active region. The isolation layer prevents the oxidation of the active region and solves the moat problem. A second SOD film(150) is formed on an upper part of the insulating layer and completely reclaims the trench. After a gate oxidation film(160) is formed on the upper part of the front of a semiconductor substrate(100), a gate polysilicon layer(162), a gate metal layer(164) and a gate hard mask layer(166) are formed.
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