发明名称 METHOD OF PROCESSING MONOCRYSTALLINE EPITAXIAL LAYERS OF GROUP III NITRIDES
摘要 FIELD: chemistry. ^ SUBSTANCE: in method of processing monocrystalline epitaxial layers of group III nitrides by irradiation with fast neutrons with further heating, burning and cooling, exposed to irradiation are epitaxial layers with neutron flow density not higher than 1012 cm-2s-1, fluence F=(0.55.0)1016 cm-2; burning is carried out at 800-900C during 20 minutes, heating is performed at rate 10-30 degrees/min, cooling to temperature 450-500C is carried out at rate 5-10 degrees/min, and further at rate 20-40 degrees/min to room temperature. ^ EFFECT: improvement of electrical and physical characteristics of epitaxial layers. ^ 2 tbl
申请公布号 RU2354000(C2) 申请公布日期 2009.04.27
申请号 RU20060140666 申请日期 2006.11.17
申请人 FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "NAUCHNO-ISSLEDOVATEL'SKIJ FIZIKO-KHIMICHESKIJ INSTITUT IM. L.JA. KARPOVA" 发明人 KOLIN NIKOLAJ GEORGIEVICH;MERKURISOV DENIS IGOREVICH;BOJKO VLADIMIR MIKHAJLOVICH
分类号 H01L21/263 主分类号 H01L21/263
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