| 摘要 |
PROBLEM TO BE SOLVED: To allow inhibition of an increase in leakage current and a decrease in withstand voltage while achieving a decrease in on-resistance, and further inhibit the occurrence of field concentration on a gate insulation film at an end of a recess in an extension direction.SOLUTION: A semiconductor device includes a recess 4a having a first recess 4b where a channel is formed when a voltage is applied to a gate electrode 6 and a second recess 4c which forms a thin layer 4d where a second GaN-based semiconductor layer is thinner than a portion of the second GaN-based semiconductor layer outside the recess 4a. When assuming that a length between an end of a portion of the gate electrode 6, which is arranged in the first recess 4b on a drain electrode 9 side and an end of a portion of the gate electrode 6, which is arranged in the second recess 4c on the drain electrode 9 side is LW, a length LW on an end side in an extension direction of the recess 4a is made shorter than a length of an intermediate part located inside the end.SELECTED DRAWING: Figure 5 |
