METHOD OF EVALUATING THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THIN-FILM TRANSISTOR, AND THIN-FILM TRANSISTOR

摘要

A method of evaluating a thin-film transistor (TFT) which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer. The method includes: measuring a change in a reflectance of a microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation; calculating a decay period which is a period of time taken for the reflectance to decay to 1/e or 1/e2, based on the change in the reflectance obtained in the measuring; and performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.

主权项

1. A method of evaluating a thin-film transistor which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer, the method comprising:
measuring a change in a reflectance of a microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation; calculating a decay period which is a period of time taken for the reflectance to decay from a first value to a second value, based on the change in the reflectance obtained in the measuring; and performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.