Method of Producing a Semiconductor Arrangement

摘要

A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of a first conduction type on the carrier. The first semiconductor zone includes a semiconductor base material doped with first and second dopants which are made of different substances which are both different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes a decrease or an increase of a lattice constant of the first semiconductor zone. The second dopant causes one or both of hardening of the first semiconductor zone and an increase of the lattice constant of the first semiconductor zone if the first dopant causes a decrease, or a decrease of the lattice constant of the first semiconductor zone if the first dopant causes an increase.

主权项

1. A method for producing a semiconductor arrangement, the method comprising:
providing a semiconductor carrier of a second conduction type; and epitaxially growing a first semiconductor zone of a first conduction type complementary to the second conduction type on the semiconductor carrier, wherein:
the first semiconductor zone comprises a semiconductor base material doped with a first dopant and with a second dopant;the first dopant and the second dopant are made of different substances;the first dopant and the second dopant are made of substances which are both different from the semiconductor base material;the first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material;the first dopant causes a decrease or an increase of a lattice constant of the first semiconductor zone; andthe second dopant causes one or both of:
a hardening of the first semiconductor zone; andan increase of the lattice constant of the first semiconductor zone if the first dopant causes a decrease, or a decrease of the lattice constant of the first semiconductor zone if the first dopant causes an increase.