| 摘要 |
The present invention relates to a light emitting diode. The light emitting diode according to an embodiment of the present invention comprises: a light emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer positioned on the first conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive layer; a first electrode pad which is positioned on the second conductive semiconductor layer to be opposed to the first conductive semiconductor layer; a second electrode pad which is electrically connected to the second conductive semiconductor layer; a second electrode extension unit which extends from the second electrode pad and is connected to the second conductive semiconductor layer; and a transparent electrode layer which is formed on the second conductive semiconductor layer, wherein a part of the second electrode extension unit is connected to the second conductive semiconductor layer through one or more holes formed by penetrating the transparent electrode layer. According to the present invention, the second electrode extension unit extending from the second electrode pad is provided with one or more holes to block electric current at the position where the holes are formed, it is possible to maximize the phenomenon that electric current is concentrated at the position where the hole is not formed, and it is possible to improve light efficiency of the light emitting diode. |
