SILICON PHOTONICS DEVICE AND COMMUNICATION SYSTEM THEREFOR

摘要

A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.

主权项

1. A system comprising a silicon photonics device, the system comprising:
a silicon photonics device comprising:
a substrate member;a PBS (Polarization Beam Splitter) overlying the substrate member, the PBS having a TE+TM (Transverse Electric+Transverse Magnetic) input and a TE output and a TM output;a TE optimized demux (demultiplexer) overlying the substrate member, the TE optimized demux having a TE demux input coupled to the TE output, the TE optimized demux having a plurality of TE demux outputs;a TM optimized demux overlying the substrate member, the TM optimized demux having a TM demux input coupled to the TM output, the TM optimized demux having a plurality of TM demux outputs; anda plurality of PD (photodiode) structures overlying the substrate, each of the PD structures being coupled to one of the plurality of TE demux outputs by a TE-PD path and one of the plurality of TM demux outputs by a TM-PD path; andwherein the TE optimized demux and the TM optimized demux comprises a waveguide structure selected from a group consisting of: an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm grating waveguides, an Echelle gratings structure with 300 nm top silicon thickness; andan interface coupled to the silicon photonics device.