Method for Patterning Using a Composite Pattern

摘要

Techniques herein improved methods for patterning substrates. Techniques herein combine direct current superposition plasma processing with photolithographic patterning techniques. An electron flux or ballistic electron beam herein from plasma processing can induce cross linking in a given photoresist, which alters the photoresist to be resistant to subsequent light exposure and/or developer treatments. An initial relief pattern is treated to become insoluble to developing solvents. A second relief pattern is formed thereon using a same anti-reflective coating. The second relief pattern is also treated to become insoluble to developing solvents. A third relief pattern is then formed on the first and second relief patterns. The three relief patterns form a combined relief pattern without needing a memorization layer.

主权项

1. A method for patterning a substrate, the method comprising:
providing a first layer of radiation-sensitive material on a substrate; developing a first exposure pattern in the first layer of radiation-sensitive material, the first exposure pattern having been exposed via photolithography, wherein developing the first exposure pattern results in a first relief pattern; treating the first relief pattern with a flux of electrons by coupling negative polarity direct current power to an upper electrode of a plasma processing system, the flux of electrons being accelerated from the upper electrode with sufficient energy to pass through a plasma and strike the substrate such that an exposed surface of the first relief pattern changes in physical properties; forming a second layer of radiation-sensitive material on the substrate; developing a second exposure pattern in the second layer of radiation-sensitive material, the second exposure pattern having been exposed via photolithography, wherein developing the second exposure pattern results in a second relief pattern; treating the second relief pattern with the flux of electrons by coupling negative polarity direct current power to the upper electrode of the plasma processing system, the flux of electrons being accelerated from the upper electrode with sufficient energy to pass through the plasma and strike the substrate such that an exposed surface of the second relief pattern changes in physical properties; forming a third layer of radiation-sensitive material on the substrate; developing a third exposure pattern in the third layer of radiation-sensitive material, the third exposure pattern having been exposed via photolithography, wherein developing the third exposure pattern results in a third relief pattern such that the third relief pattern, the second relief pattern and the first relief pattern form a combined relief pattern.