发明名称 DISPLAY DEVICE
摘要 To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
申请公布号 US2016246090(A1) 申请公布日期 2016.08.25
申请号 US201615144916 申请日期 2016.05.03
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 YOKOYAMA Masatoshi;KOMORI Shigeki;SATO Manabu;OKAZAKI Kenichi;YAMAZAKI Shunpei
分类号 G02F1/1368;H01L29/24;G02F1/1362;H01L27/12;G02F1/1333;G02F1/1343;H01L29/786;H01L29/423 主分类号 G02F1/1368
代理机构 代理人
主权项 1. A display semiconductor device comprising: a semiconductor layer comprising a channel formation region; a gate electrode overlapping with the channel formation region; a first inorganic insulating film over the semiconductor layer and the gate electrode; an organic insulating film over the first inorganic insulating film; and a second inorganic insulating film over and in contact with the organic insulating film, wherein the organic insulating film comprises a region that does not overlap with the second inorganic insulating film and overlaps with the first inorganic insulating film and the semiconductor layer.
地址 Atsugi-shi JP