发明名称 |
STRUCTURE WITH AN IMPROVED CAPACITOR |
摘要 |
A Metal-Insulator-Metal type capacitor structure (1) comprising a substrate (2), a first electrically insulating layer (14) placed on the substrate (2), a lower electrode (6) placed on the first insulating layer (14), a layer of structured metal (12) comprising a plurality of pores disposed on the lower electrode (6), a MIM capacitor (4) comprising a first conductive layer (18) placed on the structured metal layer (12) in contact with the lower electrode (6) and inside the pores, a dielectric layer (20) covering the first conductive layer (18), a second conductive layer (24) covering the dielectric layer (20) in contact with an upper electrode (8) placed on the MIM capacitor (4) and a second electrically insulating layer (16) placed on the upper electrode (8). |
申请公布号 |
EP3063789(A1) |
申请公布日期 |
2016.09.07 |
申请号 |
EP20140825391 |
申请日期 |
2014.10.29 |
申请人 |
IPDIA;COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
VOIRON, FRÉDÉRIC;PARAT, GUY |
分类号 |
H01L23/522;H01G11/26;H01L49/02 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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