发明名称 SILICON NITRIDE
摘要 Silicon nitride bodies are subjected to Li2O vapour, e.g for 3 to 200 hours at 500-1500 DEG C., to improve their resistance to thermal shocks. The Li2O may be obtained by heating LiOH, a 2% solution of which may be absorbed in a porous alumina brick located close to the silicon nitride body to be treated. The surface of the treated body can be etched away with HF.
申请公布号 US3455729(A) 申请公布日期 1969.07.15
申请号 US19650509597 申请日期 1965.11.24
申请人 PLESSEY CO. LTD.:THE 发明人 GERALD G. DEELEY;JOHN M. HERBERT
分类号 C04B35/584;C04B41/50;C04B41/85;(IPC1-7):C23C13/02 主分类号 C04B35/584
代理机构 代理人
主权项
地址