| 摘要 |
1282322 Continuous deposition furnaces TEXAS INSTRUMENTS Inc 23 July 1969 [29 Aug 1968] 37106/69 Heading F4B [Also in Division H1] Semiconductor slices 8 situated horizontally on boats 20 are passed continuously through a deposition chamber 13 having a flat base and a rounded top through entrance and exit portals 18, 19 occupying part only of end walls of the chamber 13. A mixture of gases for example including a source of dopant such as BBr 3 or POCl 3 , is passed into the chamber 13 through inlets 14, 16 at each end of the chamber and in the preferred application of the apparatus, under the action of heating coils 3 causes a compound including the dopant to be deposited on each slice 8, e.g. in the form of a boro-silicate or phospho-silicate glass if the slices 8 are of Si. A subsequent drive-in diffusion stage may be performed in the same apparatus. The slices 8 may be automatically loaded on to and unloaded from the boats 20, and a conveyor system 22 transfers the loaded boats 20 between the exit portal 19 of the chamber 13 and the unloading station. The gas inlet 14, 16 may be single or branched as shown and the entrance and exit portals 18, 19 may or may not extend outwardly from the ends 15, 17 of the chamber 13 in the manner shown. |
