| 摘要 |
<p>1315316 Semi-conductors RCA CORPORATION 21 Aug 1970 [29 Aug 1969] 40379/70 Heading H1K A thin film hetero junction diode comprises a n-electrode 32 of a high work function metal, e.g. gold, silver, nickel, chromium, copper, bismuth on an insulant substrate 34, e.g. glass, alumina, beryllia. A thin tellurium film 36 is disposed on electrode 32 and substrate surface 33 leaving exposed a bond pad 38. A crystalline selenium layer 40 is deposited on the tellurium film and a crystalline semi-conductor layer 42 having lattice constant and crystal structure matching that of selenium is deposited thereon. This may be any N-type compound including a Group VI element; e.g. selenides, sulphides or tellurides of cadmium or zinc or the selenides of antimony or arsenic. A superincumbent metal electrode 44 comprises a film of indium 46 covered by aluminium layer 48; a portion of electrode 44 being disposed on a portion of surface 33 to provide a bond pad 50. The selenium layer is formed by amorphous vapur deposition and crystallization by heating; repeated several times. Alternatively the tellurium film may be omitted and the selenium layer deposited direct on an electrode of nickel, chromium, silver, or bismuth having hexagonal crystal structure. The diode I-V characteristic is given (Fig. 3, not shown).</p> |
