SEMICONDUCTOR MEMORY DEVICE

摘要

The semiconductor element consists of active regions, word lines, bit lines, two MOSFETs which are formed on the active region, and source and drain. Active regions are formed lengthy in the bit line direction by removing field oxide with is formed between active regions. Word lines are formed lengthy with a width on active regions in the direction perpendicular to bit lines. Drain is formed on active region under both sides of word lines to contact bit lines. Source is formed on the exposed active region by removing the region in the middle of word line width, and is connected to electric charge storage electrodes. Common drains of two MOSFETs are connected to bit lines, and common sources are connected to one capacitor.