| 摘要 |
PURPOSE:To provide a method for manufacturing a p-type gallium nitride based compound semiconductor, by which a gallium nitride based compound semiconductor doped with a p-type impurity is made a p-type semiconductor having a low resistance and further, the value of the resistance is made uniform over the whole of its wafer independently of its film thickness and moreover, a light emitting element made of the compound semiconductor can have a double or single hetero-structure. CONSTITUTION:By a vapor growth method, a gallium nitride based compound semiconductor layer doped with a p-type impurity is formed, and thereafter, its annealing is performed at a temperature not lower than 400 deg.C. However, it is more preferable that the annealing is performed in a pressurized atmosphere or performed by providing newly a cap layer on the gallium nitride based compound semiconductor. |
