| 摘要 |
A construction for a semiconductor device in which a large number of closely spaced beam leads on a semiconductor chip are connected to external leads, including: an insulating substrate, a metallized pattern of conductors on the substrate, and a connector subassembly for coupling the beams on the chip to the conductors on the substrate. The connector subassembly comprises an insulating body having photolithographically formed beam leads in a diverging pattern thereon, adapted to connect to the chip at one end and to the conductive patterns at the other end thereof.
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