| 摘要 |
PURPOSE:To provide a method for forming p-type of gallium nitride compound semiconductor in which gallium nitride compound semiconductor doped with p-type impurity such as Mg, Zn, etc., is formed in a stable low resistance p-type and a light emitting unit is formed in a double heterostructure or single heterostructure. CONSTITUTION:After gallium nitride compound semiconductor represented by a general formula GaXAl1-XN (0<=X<=1) doped with p-type impurity is grown by a vapor growth method, a surface temperature of a gallium nitride compound semiconductor layer is enhanced to 600 deg. or higher, and irradiated with an electron beam. |
