| 摘要 |
<p>A junction field effect transistor in which the source and drain electrodes are connected by a large number of exceedingly slender rod-shaped semiconductor crystals grown side by side parallel to each other and each having an outer sheath of opposite conductivity semiconductor material. Each crystal and its sheath have a P-N junction between them and all of the sheaths are connected together to a gate terminal. Application of a gate voltage to this terminal causes a depletion layer within each rod-shaped crystal to constrict the charge-carrying path through the crystal to an extent determined by the magnitude of the gate voltage. The rod-shaped crystals are grown in such a way that individual rod-shaped crystals are formed rather than a single crystal of large area.</p> |
