Semiconductor device with one or more MOS transistors - source zone(s) and drain zone(s) are in one chip area of SC chip

摘要

One or more base zones (2) are provided on the side of a first zone (3) surrounding a collector zone (5) and an emitter zone (4) separated by the base zone (2). They reach the chip surface (9) and their conduction type is opposite to that of the base zone (2) surrounded by the substrate (1) which separates them. Substrate resistivity is higher than that of the base zones (2). Two n+ doped regions (11, 12) have separate metal contacts (13, 14). These regions represent source or drain regions of a MOS transistor. An insulating layer (15) is provided over the doped region (3). The metal electrode (10) is the gate electrode of the MOS transistor.