| 摘要 |
PURPOSE:To obtain high integration of an MOS field effect integrated circuit by connecting the first layer gate electrode to the second or other wires on a channel without a risk of displacement of mask. CONSTITUTION:A field oxide film 10 is formed on a P-type Si substrate 9, and openings are perforated at a gate oxide film 11. N-type impurity added polysilicon film 12 and SiO2 film 16 are superimposed thereon, Si3N4 mask 17 is coated thereon, N-type impurity is implanted thereto, and is heat treated to form N-type layers 14, 15. Then, the films 16, 17 are etched to form SiO2 18, and SiO2 19 is coated thereon, an opening is perforated selectively thereat, and an electrode 20 of aluminum is formed thereon. Since selective oxide film 18 is existed at each of both sides of the gate electrode 13 in this configuration, there exists no risk to displace the mask to shortcircuit the diffused layers 14, 15 through the electrode 20. Accordingly, the gate electrode can be connected to the wiring metal on the channel so as to reduce the occupying area. When the thickness of the film 18 is controlled, the surface can be flattened. |
