| 摘要 |
PURPOSE:To provide a surface light emitting type diode having a high light take-out efficiency. CONSTITUTION:An N-type current blocking layer 24 is provided between a second P-type clad layer 22 and a cap layer 26. P-type impurities are diffused or ion-implanted through the part except the part, to which an upper electrode 30 is mounted, of a light take-out surface 28 of the layer 26, whereby the peripheral edge parts of the layer 24 are inverted into a P-type. |
