| 摘要 |
PURPOSE:To obtain an element of good characteristics by a method wherein the first oxide superconductor layer of BaPb1-xBixO3 is formed on an insulating substrate, and an insulation layer is applied over it and by an opening provided, a region of the exposed superconductor layer is transformed into a high resistance layer by sputter etching process, and all over the surface including it the second oxide superconductor layer of BaPb1-yBiyO3 is provided. CONSTITUTION:On an insulating substrate 31 consisting of sapphire or the like the first oxide superconductor layer 33 of BaPb1-xBixO3 (0.05<=x<=0.3) is attached, and all over it an insulation layer 35 of Al2O3 or SiO2 or the like is formed. Subsequently a window 34 is bored at the center, and a sputter etching process is performed on a region of the exposed layer 33 in an atmosphere containing Ar and O2, and a high resistance layer 36 is formed here while the thickness of the layer 33 is decreased. Subsequently all over the surface including them the second oxide superconductor layer 37 of BaPb1-yBiyO3 (0.05<=y<=0.3) is applied again and covered with an insulation layer 38, and a superconductor layer 39 for control is provided on the insulation layer 38 in corespondence with the Josephson junction 8 consisting of the high resistance layer 36. |
