| 摘要 |
PURPOSE:To hold and reset the storage data even after a power supply is cut off, by constituting an MOSTR like an FAMOS type transistor having a floating gate at the load MOS part of a 6-transistor static RAM element. CONSTITUTION:A static RAM element containing an N type MOSTR is constituted with FAMOS type TRs QF1, QF2 as an MOSTR having a floating gate, N type enhancement MOSTRs QB, QC as a TR connected to the source, and N type enhancement MOSTRs QA, QB as an RAM element selecting TR. The selection signal S is set at 0 in order to turn the data written into the static RAM element into a nonvolatile state. Then the supplied voltage is increased up to a level higher than the pinch-off voltage of the TRs QF1 and QF2 respectively. Thus the storage data is never lost even when a power supply is cut off, and a nonvolatile RAM element is obtained. |
