发明名称 METHOD OF GENERATING ION BEAM
摘要 PURPOSE:To directly field-evaporate a strand-type ion source material and easily obtain an ion beam from metals such as A and Mg by applying high voltage between a linear type electrode and a lead-out electrode that is opposed to the said electrode. CONSTITUTION:When an Al wire of 100mum in diameter is used, the distance between the tip 9 of an ion emitter material 4 and a lead-out electrode 3 is approximately 50mm.. The field strength of the tip 9 of the ion emitter material 4 can exceed 2V/Angstrom and the field evaporation of Al can be performed by applying the acceleration voltage of approximately 100kV. Besides, when ion injection or processing is performed using the ion beam, the acceleration voltage and ion current must independently be controlled. To perform it, a control electrode 10 may be provided enclosing the tip 9 of the ion emitter material 4. In this case, the control of ion current can be performed by accelerating and decelerating the control voltage 11 that is applied between the electrode 10 and ion emitter material 4.
申请公布号 JPS58204445(A) 申请公布日期 1983.11.29
申请号 JP19820086013 申请日期 1982.05.21
申请人 FUJITSU KK 发明人 OKAMURA SHIGERU;TAGUCHI TAKAO
分类号 H01J37/08;H01J3/04;H01J27/26;H01J49/16 主分类号 H01J37/08
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