| 摘要 |
PURPOSE:To obtain the titled target which enables to easily obtain a desired mixing ratio without limiting its positional relationship with a substrate or forming abnormal heating, by partially coating the surface of a target A with the film of a target B. CONSTITUTION:For instance, a Co film 2 of about 10mum in thickness is formed on an orbicular Gd target 1 by vacuum deposition. As a means for partially forming the film 2 in this way, a mask is used. By changing the shape of said mask, the surface ratio of the Gd target occupied by Co can be discretionarily changed. |
