| 摘要 |
PURPOSE:To improve the barrier effect by reducing the heating or time-elapsing deterioration in the barrier effect due to TiN by a method wherein an Si solid state epitaxial layer is prevented from growing by a TiN film simultaneously the Si concentration in the first Al-Si layer is increased while the diffusion of Al in the first Al-Si layer into TiN film is decreased. CONSTITUTION:An insulating film (e.g. PSG film) 12, a contact hole 13 opened in the insulating film 12, the first Al-(10-50%) Si film 14, a TiN film (barrier layer) 15 1,000-2,000Angstrom in thickness, the second pure Al layer 16 are respectively formed on a silicon substrate 11. In such a contact wiring, the insulating film 12 is grown on silicon substrate 11; a contact hole is made by opening a window through the insulating film 12; and the first Al-Si film 14 containing 10-50% of silicon is deposited from several hundred to several thousand Angstrom in film thickness by sputtering process on overall surface. Finally the TiN film 15 and the pure Al layer 16 are respectively deposited by sputtering process. In said contact wiring, an Si solid state epitaxial layer can be restrained from growing since the Al contained in the second Al layer 16 can be prevented from diffusing down to the substrate 11 by the TiN film 15 provided as a barrier layer. |
