| 摘要 |
PURPOSE:To avoid a step part, which gives effects on an upper layer when a multilayered film is formed, by making it possible to perform patterning by implanting oxygen ions without etching a conducting thin film and by only making the film to remain as an insulating oxide film. CONSTITUTION:A conducting thin film 12 is formed with a conducting material, which is to become insulating material by oxidation. An oxygen-ion blocking film 13 having a specified pattern is formed with a material, which blocks the transmission of the oxygen ions, on the surface of the film 12. Oxygen ions 14 are implanted into the surface of the conducting thin film 12 including the oxygen-ion blocking film 13. The oxygen-ion implanted part of the conducting thin film 12 is oxidized by heat treatment, and insulating property is obtained. The patterning can be performed by implanting the oxygen ions and only by making the insulating oxide film to remain without etching the conducting thin film 12. Thus the surface can be flattened. In this way a step part, which gives effects on the upper layer when a multilayered film is constituted, can be eliminated.
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