发明名称 WIRING STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To decrease capacitance between wirings and stress in an insulating film and to eliminate interference and transmission delay of electric signals, by forming cavities at the parts of an insulating film between conductors. CONSTITUTION:In an insulating film 4 located between wiring films 3a-3c, cavities 5a and 5b, which have the height approximately equal to the thickness of the wiring films 3a-3c, are formed. The bottom parts of the cavities 5a and 5b are contacted with an insulating film 2 formed on the surface of a substrate 1. The capacitance between the wirings is decreased in comparison with the device, in which only the insulating layer 4 is formed, because of the formation of the cavities 5a and 5b. The cavities 5a and 5b indicate the effect for alleviating stress in the wiring films. This fact contributes to the improvement of the reliability of the wiring.
申请公布号 JPS63179548(A) 申请公布日期 1988.07.23
申请号 JP19870012817 申请日期 1987.01.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKAMOTO TATSURO
分类号 H01L21/31;H01L21/768;H01L23/522 主分类号 H01L21/31
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