| 摘要 |
PURPOSE:To provide the higher sensitivity than in the case of using respective developing soln. alone by mixing >=2 kinds of the developing solns. and developing a resist by such developing soln. mixture. CONSTITUTION:The resist is developed by using the soln. mixture composed of a 1st org. soln. and 2nd org. soln. of respectively satisfying delta1<deltaR, delta2>12.5 where the solubility parameters of the 1st org. soln. and the 2nd soln. are designated and delta1, delta2 in the case of developing the resist consisting of a high polymer of the solubility parameter deltaR. For example, polymethyl methacrylate (PMMA) having 11.3 solubility parameter deltaR is used as the resist, methyl isobutyl ketone (MIBK) having 8.57 solubility parameter delta1 is used as the 1st org. solvent and methyl alcohol (MeOH) having 14.28 solubility parameter delta2 is used as the 2nd org. soln. The higher sensitivity is thereby obtd. in the case of developing the resist by using >=2 kinds of the developing solns. in combination than in the case of using the respective developing solns. alone. |
