Redundant circuit incorporated in semiconductor memory device,申请号US19890337003-传众专利搜索

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发明名称	Redundant circuit incorporated in semiconductor memory device
摘要
申请公布号	US5018104(A)	申请公布日期	1991.05.21
申请号	US19890337003	申请日期	1989.04.12
申请人	NEC CORPORATION	发明人	URAI, TAKAHIKO
分类号	H01L21/8247;G11C16/34;G11C29/00;G11C29/02;G11C29/52;H01L21/60;H01L21/66;H01L21/82;H01L21/822;H01L27/04;H01L29/788;H01L29/792	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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