发明名称 METHOD AND APPARATUS FOR EVALUATING AMOUNT OF IMPURITY GAS
摘要 <p>PURPOSE:To detect low-concentration impurity gas contained in an atmosphere with much higher sensitivity than conventional sensitivity and to evaluate the amount of the gas. CONSTITUTION:When metallic thin films 2 and 2' are exposed in an atmosphere containing impurity gas, the metallic thin films 2 and 2' are corroded with the impurity gas. Thus the gloss disappears by the corrosion and the like. This phenomenon is utilized, and the time changes of the amounts of the reflected, lights from the metallic thin films 2 and 2' for exposure and reference are measured, respectively. The normalized reflecting intensity at the exposing metallic thin film 2 is computed based on the data.</p>
申请公布号 JPH04262245(A) 申请公布日期 1992.09.17
申请号 JP19910009030 申请日期 1991.01.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 MUKOGAWA YASUKAZU
分类号 G01N21/55;G01N21/77 主分类号 G01N21/55
代理机构 代理人
主权项
地址