| 摘要 |
PURPOSE:To realize a transistor module having high reliability by unifying a current level flowing through the respective built-in chips in an electrically parallel state. CONSTITUTION:In a transistor module 1, the linear symmetrically branched collector terminals 20 are conductively connected in the symmetrical positions in a first circuit pattern region 11 consisting of the linear-symmetrically arranged one side and the other side circuit pattern regions 7, 9, while an emitter terminal 21 is conductively connected in a second circuit pattern region 13. Here, the silicon chips 15, 16 are loaded in the one side and other side circuit pattern regions 7, 9 while being electrically in a parallel state between the collector terminal 20 and the emitter terminal 21. |
